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// home menus - add items here
with(milonic=new menuname("home_auger")){
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aI("text=Auger Electron Spectroscopy (AES, Auger) is a surface-specific analytical technique that utilizes a high-energy electron beam as an excitation source. Atoms that are excited by the electron beam can relax under the emission of "\;Auger"\; electrons. AES measures the kinetic energies of the emitted Auger electrons, which are characteristic of elements present at the surface and "\;near-surface"\; of a sample.
;")
}
with(milonic=new menuname("home_eds")){
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aI("text=Energy Dispersive X-ray Spectroscopy (EDS) is an analytical supplement to Scanning Electron Microscopy (SEM) that provides elemental analysis of smaller areas on a sample. The impact of the electron beam on the sample produces x-rays that are characteristic of the elements found on the sample. With EDS, you can determine the elemental composition of individual points or map out the lateral distribution of elements from select areas with sub-micron resolution.
;")
}
with(milonic=new menuname("home_fib")){
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aI("text=A Focused Ion Beam (FIB) instrument uses a finely focused ion beam to modify and image samples. FIB is chiefly used to create very precise cross sections of a sample for subsequent imaging via SEM, STEM or TEM or to perform circuit modification. Additionally FIB can be used to image a sample directly, detecting emitted electrons. The contrast mechanism for FIB is different than for SEM or S/TEM, so for some specific examples FIB can provide unique information.
;")
}
with(milonic=new menuname("home_ftir")){
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aI("text=Fourier Transform Infrared Spectroscopy (FTIR) provides specific information about chemical bonding and molecular structures, making it useful for analyzing organic materials and certain inorganic materials. Chemical bonds vibrate at characteristic frequencies, and when exposed to infrared radiation, they absorb the radiation at frequencies that match their vibration modes. Measuring the radiation absorption as a function of frequency produces a spectrum that can be used to identify functional groups and compounds.
;")
}
with(milonic=new menuname("home_gc_ms")){
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aI("text=Gas Chromatography Mass Spectrometry (GC/MS) identifies volatile and semi-volatile compounds and separates them into individual components using a temperature-controlled gas chromatograph. During the process, a sample is injected into the chromatograph (or it may come from another sampling device) and passes through the chromatography column, which separates mixtures into individual components as they pass through at different rates. The result is a quantitative analysis of the components, along with a mass spectrum of each component.
;")
}
with(milonic=new menuname("home_gdms")){
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aI("text=Glow-Discharge Mass Spectrometry (GDMS) measures trace elemental content in inorganic solid materials such as metals, semiconductors, ceramics, carbides, graphite and other solid materials. GDMS is a direct solid sampling technique with parts-per-million (ppm) to parts-per trillion (ppt) detection limits for most elements. GDMS exposes samples to an argon glow discharge that sputter erodes the sample surface forming ions during the process that can then be separated in a mass spectrometer.
;")
}
with(milonic=new menuname("home_icp")){
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aI("text=Need Content, Need content
;")
}
with(milonic=new menuname("home_icp_oes_ms")){
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aI("text=Inductively Coupled Plasma/Optical Emission Spectroscopy (ICP/OES) measures major component concentrations that make up inorganic compounds such as alloys, compound semiconductors, and crystals. Samples for ICP/OES analysis are dissolved in a liquid, diluted, volatilized and then ionized in an argon plasma. Ions relaxing to their base states give off optical emissions (light). By measuring wavelength and intensity of the optical emissions, we can measure composition and concentration of the major elements.
;")
}
with(milonic=new menuname("home_iga")){
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aI("text=Instrumental Gas Analysis (IGA) is also known as "LECO" analysis. This technique is designed to determine the levels of included gases in a solid sample. Carbon, Sulfur, Nitrogen, Oxygen, and Hydrogen can all be determined to levels down to 1 ppm. Samples are heated or burned to release gases or gas products that can then be trapped and measured using thermal conductivity.
;")
}
with(milonic=new menuname("home_la_icp_ms")){
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aI("text=Laser Ablation – Inductively Coupled Plasma – Mass Spectrometry (LA-ICP-MS) measures trace elemental content in inorganic solid materials. An area as small as 4µm diameter can be measured on just about any solid surface. Sampling depth is about 1µm and detection limits are in the range of parts-per-million (ppm) to parts-per-billion (ppb) depending on element. Material volatilized by the laser beam is ionized in an argon plasma and then mass separated for identification and quantification.
;")
}
with(milonic=new menuname("home_lexes")){
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aI("text=Low Energy X-ray Emission Spectrometry (LEXES) is a near surface analytical technique that utilizes a high-energy electron beam as an excitation source. Atoms that are excited by the electron beam relax under the emission of characteristic X-rays. Dopant concentrations, film composition, and/or film thickness can be mapped across wafers or compared between wafers with precisions of 1% or better.
;")
}
with(milonic=new menuname("home_raman")){
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aI("text=Raman Spectroscopy (Raman) enables you to determine the chemical structure of a sample and identify the compounds present by measuring molecular vibrations, similar to Fourier Transform Infrared Spectroscopy (FTIR). However, the method used with Raman yields better spatial resolution and enables the analysis of smaller samples.
;")
}
with(milonic=new menuname("home_rbs")){
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aI("text=Rutherford Backscattering Spectroscopy (RBS) is an ion scattering technique that is used for compositional thin film analysis. RBS is unique in that it allows quantification without the use of reference standards. During an RBS measurement, high-energy (MeV) He++ ions are directed onto a sample and the energy distribution and yield of the backscattered He++ ions at a given angle is recorded. Since the backscattering cross section for each element is known, it is possible to obtain quantitative depth profiles from the RBS spectra (for thin films that are less than 1mm thick).
;")
}
with(milonic=new menuname("home_rbs_channeling")){
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aI("text=Ion channeling is an ion scattering technique used for thin film analysis that takes advantage of the material properties of single crystals. When the He++ ion beam is properly aligned with the crystalline axis of a single crystal sample, the backscattering signal drops dramatically. This effect can be used to measure the crystallographic quality of the sample with respect to depth. Applications include profiling crystal quality after different treatments (ion implant, annealing, crystal growth) or determining the thickness of amorphous layers.
;")
}
with(milonic=new menuname("home_rbs_hfs")){
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aI("text=Hydrogen Forward Scattering Spectrometry (HFS) is an ion scattering technique that uses a modified sample geometry during the analysis to quantitatively profile the hydrogen concentration in thin films. During the process, a He++ ion impinges the sample surface at a glancing angle, knocking the hydrogen atoms out of the sample where they are collected by a solid state detector. A thin foil is used to block any forward scattered He atoms but transmit the forward scattered H atoms.
;")
}
with(milonic=new menuname("home_rbs_nra")){
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aI("text=Nuclear Reaction Analysis (NRA) is used to measure low-Z elements (such as carbon, nitrogen, oxygen, and boron) in thin films. With NRA, the primary projectile induces a nuclear reaction with the low-Z nuclei in the thin film and ejects particles with kinetic energies characteristic of specific nuclear reaction.
;")
}
with(milonic=new menuname("home_rbs_pixe")){
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aI("text=Particle Induced X-ray Emission (PIXE) is performed simultaneously with Rutherford Backscattering Spectroscopy (RBS). During RBS analysis, characteristic x-rays are emitted from the sample, similar to those measured during EDS analysis. However, because the sample is bombarded with high energy He++ ions, there is little or no Bremstrahhlung background signal. The energy from the collected x-rays can be used to distinguish between two elements that are close in mass, and therefore emit a single signal using traditional RBS. Measuring the intensity of the signal allows for quantification of each element.
;")
}
with(milonic=new menuname("home_sem")){
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aI("text=Scanning Electron Microscopy (SEM) rasters a focused electron beam across a sample surface, providing high-resolution and long-depth-of-field images of the sample surface. SEM is one of the mostly widely used analytical tools in industry due to the extremely detailed images it can provide. Coupled to an auxiliary Energy Dispersive X-ray Spectroscopy (EDS) detector, this technique also offers elemental identification of nearly the entire periodic table.
;")
}
with(milonic=new menuname("home_sims")){
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aI("text=Secondary Ion Mass Spectrometry (SIMS) is an analytical technique that detects very low concentrations of dopants and impurities. It can provide elemental depth profiles over a depth range from a few angstroms to tens of microns. SIMS works by sputtering the sample surface with a beam of primary ions. Secondary ions formed during the sputtering are extracted and analyzed using a mass spectrometer. These secondary ions can range from matrix levels down to sub-parts-per-million trace levels.
;")
}
with(milonic=new menuname("home_afm")){
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aI("text=Scanning Probe Microscopy (SPM), more commonly known as Atomic Force Microscopy (AFM), provides atomic- or near-atomic-resolution surface topography, which is ideal for determining angstrom-scale surface roughness on a sample. In addition to presenting a surface image, AFM can also provide quantitative measurements of feature sizes, such as step height, and other sample characteristics, such as capacitance measurements for identifying carrier and dopant distributions
;")
}
with(milonic=new menuname("home_tem_stem")){
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aI("text=Transmission Electron Microscopy (TEM) and Scanning Transmission Electron Microscopy (STEM) are related techniques that use an electron beam to image a sample. High energy electrons, incident on an ultra-thin samples allow for image resolutions that are on the order of a couple of Ångstroms. Compared to SEM, S/TEM has better spatial resolution, is capable of additional analytical measurements, and requires significantly more sample preparation.
;")
}
with(milonic=new menuname("home_tof_sims")){
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aI("text=Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is a surface analytical technique that focuses a pulsed beam of primary ions onto a sample surface, producing secondary ions in a sputtering process. Analyzing these secondary ions provides information about the molecular and elemental species present on the surface.
;")
}
with(milonic=new menuname("home_tga_dta")){
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aI("text=Thermogravimetric Analysis (TGA) is a thermal analysis technique which measures the weight change in a material as a function of temperature and time, in a controlled environment.
Differential Thermal Analysis (DTA) is a calorimetric technique, recording the temperature and heat flow associated with thermal transitions in a material. In combination, these techniques allow the investigation of the thermal stability and phase transitions of materials.
;")
}
with(milonic=new menuname("home_txrf")){
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aI("text=Total Reflection X-ray Fluorescence (TXRF) utilizes extremely low-angle x-ray excitation of a polished sample surface. The incident angle of the x-ray beam (typically 0.05°\;) is below the critical angle for the substrate and limits excitation to the outer most surface layers of the sample. The fluorescence photons emitted from the surface atoms are characteristic of the elements present. A highly surface-sensitive technique, TXRF is optimized for analyzing surface metal contamination on semiconductor wafers.
;")
}
with(milonic=new menuname("home_xps_esca")){
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aI("text=X-ray Photoelectron Spectroscopy (XPS), also known as Electron Spectroscopy for Chemical Analysis (ESCA), is used to determine quantitative atomic composition and chemistry. It is a surface analysis technique with a sampling volume that extends from the surface to a depth of approximately 50-70 Å\;. Alternatively, XPS can be utilized for sputter depth profiling to characterize thin films by quantifying matrix-level elements as a function of depth.
;")
}
with(milonic=new menuname("home_xrd")){
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aI("text=X-ray Diffraction (XRD) is a powerful nondestructive technique for characterizing crystalline materials. It provides information on structures, phases, preferred crystal orientations (texture), and other structural parameters, such as average grain size, crystallinity, strain, and crystal defects. X-ray diffraction peaks are produced by constructive interference of a monochromatic beam of x-rays scattered at specific angles from each set of lattice planes in a sample.
;")
}
with(milonic=new menuname("home_xrf")){
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aI("text=X-ray Fluorescence (XRF) is a non-destructive technique that is used to quantify the elemental composition of solid and liquid samples. X-rays excite atoms in the sample, causing them to emit x-rays with energies characteristic of each element present. The intensity and energy of these x-rays are then measured. XRF is capable of detecting elements from Na-U in concentrations from PPM range to 100%. Through the use of appropriate reference standards, XRF can accurately quantify the elemental composition of both solid and liquid samples.
;")
}
with(milonic=new menuname("home_xrr")){
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aI("text=Specular X-ray Reflectivity (XRR), a technique parallel to X-ray Diffraction (XRD), is now becoming a widely used tool for the characterization of thin-film and multilayer structures. X-ray scattering at very small diffraction angles allows characterization of the electron density profiles of thin films down to a few tens of angstroms. Using a simulation or the least-squared fit of the reflectivity pattern, one can obtain highly accurate measurements of thickness, interface roughness, and layer density for either crystalline or amorphous thin films and multilayers.
;")
}
with(milonic=new menuname("home_ate")){
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aI("text=ATE Testing
Our wide range of ATE test equipment and experienced team can support first silicon debug to release to high volume production for a wide range of products, from Digital to RF, including wafer sort and packaged part testing. Test platforms include Verigy, Teradyne, Advantest.
;")
}
with(milonic=new menuname("home_rel")){
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aI("text=Burn-in / Reliability Testing
Our Burn-in & Reliability Qualification lab is one of the finest in the country with over 75 chambers & ovens, tight ESD safety controls, routine audits, and a dedicated engineering staff to provide you with all of the burn-in, package qualification, process qualification, and other reliability data you need. Our lab service procedures are ISO 17025 accredited and DSCC certified. We follow industry standards, such as JEDEC, Mil-Std, AEC, as well as customer specific requirements. All equipment uses N.I.S.T. traceable tooling and monitored, calibrated profiles.
;")
}
with(milonic=new menuname("home_esd")){
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aI("text=ESD
EAG is the largest independent ESD lab in the US, with locations in Silicon Valley, Phoenix, and Irvine. Our experienced staff and large pool of equipment guarantees expert setup and fast execution of HBM, MM, CDM, and Latchup tests. The testing conforms to JEDEC, AEC, ESDA, and MIL-STD specs.
;")
}
with(milonic=new menuname("home_pcb")){
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aI("text=PCB
PCB Design uses state of the art design tools to include auto route and quickly design the most complex PCB’s in the industry. With our seasoned veterans, we’ll assist you with every step of the way in concept, layout, test, and development of your hardware. Every PCB design involves layout, application test engineer, and project manager to ensure the design is done correctly the first time.
;")
}
with(milonic=new menuname("home_circuit")){
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aI("text=FIB Circuit Edit
FIB allows the customer to cut traces or add metal connections within a chip. Our services include sample preparation, sample analysis, fault isolation, and actual circuit modifications. These circuit edits could support basic electrical design characterization or verification of redesign parameters. Our full range of debug tools enables you to solve even the most vexing logic failures and other anomalies.
;")
}
with(milonic=new menuname("home_fa")){
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aI("text=Failure Analysis
We provide a complete line of failure analysis services for IC devices, packaged devices and printed circuit boards including electrical tests, electrical failure isolations, physical failure isolation, reverse engineering and construction analysis. A wide range of techniques are used including EMMI, OBIC, CSAM, Xray, LIVA/TIVA, and many others.
;")
}
with(milonic=new menuname("home_advmicro")){
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aI("text=Advanced Microscopy
The Microscopy group includes staff and equipment to perform FESEM (Field Emission Scanning Electron Microscopy), which is used for surface structural and cross-sectional analysis. EDX (Energy Dispersive X-Ray Spectroscopy) is used to perform Elemental materials analysis, both qualitative and quantitative. FETEM(Field Emission Transmission Electron Microscopy) is used to perform microanalysis with sub-nanometer spatial resolution.
;")
}
with(milonic=new menuname("home_calibration")){
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aI("text=Equipment Calibration
Evans Analytical Group provides ISO 17025 accredited calibration service supporting Semiconductor, Avionics, Aerospace, Automotive, Biotech, RF/Communications, Defense, Government, Life Sciences, and General Industries.
;")
}
with(milonic=new menuname("home_thermocouples")){
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aI("text=Thermocouples
Our thermocouple laboratories in Austin, TX and Phoenix, AZ have been providing high quality profile and spike thermocouple assemblies to customers around the world for over 30 years.
;")
}
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