EAG - Evans Analytical Group
Widest Array of Surface Analytical
Testing Services Available Anywhere
About EAG Techniques & Services Solutions Customer Service Training News & Events Publications Investor Relations Contact Us
Techniques & Services

Ion Channeling

Ion channeling is an ion scattering technique used for thin film analysis that takes advantage of the material properties of single crystals. When the He++ ion beam is properly aligned with the crystalline axis of a single crystal sample, the backscattering signal drops dramatically. This effect can be used to measure the crystallographic quality of the sample with respect to depth. Applications include profiling crystal quality after different treatments (ion implant, annealing, crystal growth) or determining the thickness of amorphous layers.

Very few independent labs offer this unique analytical service, and none can match Evans Analytical Group®’s (EAG) depth and breadth of experience. We routinely analyze a wide range of materials, including very thin films. Plus, you can count on fast turnaround times, accurate data, and person-to-person service, ensuring you understand the analytical test results and what they mean for your material or process.

View Application Notes down arrow

Ideal Uses for Ion Channeling Analysis Relevant Industries for Ion Channeling Analysis
  • Crystallographic analysis of thin films
  • Crystal damage/defect profiling
  • Determining percent amorphization
  • Determining thickness of amorphized layers
  • Defense
  • Semiconductor
  • Telecommunications
Strengths of Ion Channeling Analysis Limitations of Ion Channeling Analysis
  • Non-destructive depth profiling
  • Quantitative determination of amorphization and defect density without standards
  • Whole wafer analysis (150, 200, 300 mm) as well as irregular and large samples
  • Conductor and insulator analysis
  • Large analysis area (~2 mm)
  • Useful information limited to top ~1 μm  of samples

Application Notes

Quick Links

Ion Channeling Technical Capabilities

Signal Detected:
Backscattered He atoms

Elements Detected:
B-U

Detection Limits:
1e20 displaced atoms/cm3

Depth Resolution:
50 - 200 Angstrom (±10 Å precision)

Imaging/Mapping:
No

Lateral Resolution/Probe Size:
>=1 mm